Optical system and method for measurement of one or more parameters of via-holes

ABSTRACT

The present invention provides a novel system and method for obtaining at least one of a cross-section profile, depth, width, slope, undercut and other parameters of via-holes by non-destructive technique. The optical system comprises an illumination system for producing at least one light beam and directing it on a sample in a region of the structure containing at least one via-hole; a detection system configured and operable to collect a pattern of light reflected from the illuminated region, the light pattern being indicative of one or more parameters of said via-hole; and, a control system connected to the detection system, the control system comprising a memory utility for storing a predetermined theoretical model comprising data representative of a set of parameters describing via-holes reflected pattern, and a data processing and analyzing utility configured and operable to receive and analyze image data indicative of the detected light pattern and determine one or more parameters of said via-hole.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a U.S. National Phase Application under 35 U.S.C.371 of PCT International Application No. PCT/IL2008/001599, which has aninternational filing date of Dec. 10, 2008, and which claims benefitfrom Israel Patent Application No. 188029, filed Dec. 10, 2007, thecontents of which are herein incorporated by reference in theirentirety.

FIELD OF THE INVENTION

This invention relates to the field of measurement techniques, andparticularly to an optical system and method for measurement ofparameters of so-called Through-Silicon Vias (TSV).

BACKGROUND OF THE INVENTION

Packaging technology for Integrated Circuits (IC) in the semiconductorindustry undergoes increased development in order to satisfy a need forminiaturization and/or mounting reliability. Wafer level processing(WLP) techniques have been developed to allow various features of ICpackages to be formed within a wafer before the wafer is diced. Forinstance, certain WLP techniques are used to form device interconnectionfeatures together with other wafer processing steps, thereby avoidingthe need to form wire bonding after IC chips are diced.

In general, such WLP techniques allow IC package manufacturing processesto be streamlined and consolidated. Moreover, WLP techniques cangenerally be performed in parallel on a plurality of IC chips arrangedin a matrix on the wafer, thereby allowing a plurality of IC chips to beformed and tested while still in a wafer stage. By performing WLPtechniques in parallel across a plurality of IC chips, IC packagemanufacturing throughput is increased and the total time and costrequired to fabricate and test IC packages is decreased accordingly. Inaddition, by forming features such as device interconnections at thewafer level, the overall size of IC packages can be reduced.

One of the WLP techniques used to form device interconnections involvesthe formation of a through silicon via. A through silicon via (TSV) isusually formed by creating a hole (via-hole) through a semiconductorsubstrate and/or various material layers formed on the substrate, andthen forming a penetration electrode in the hole. The penetrationelectrode may be connected to internal features of an IC chip such assignal terminals, data transmission lines, transistors, buffers, and soon. In addition, the penetration electrode may be connected to featuresexternal to the IC chip, such as a PCB, via an external terminal.

Depending on the type of process in use, via-holes could be formed indifferent layered stacks of materials in wafers and other substrates.The holes are typically formed by etching based on Reactive Ion Etching(RIE) or laser drilling by ablation. The ion etching can be performed bya variety of processes optimized for materials, etch rate, sidewallslope, smoothness and other parameters. A well known method of etchingis the Bosch method which is based on alternating steps ofsemi-isotropic etching and deposition.

In the so-called “via-first approach”, the holes are first formed insilicon, by etching using an etch mask and photoresist and/or otherharder mask materials. The mask materials layers are relatively thinlayers on thick silicon. If the via-holes are formed by laser-drilling,no etch mask material is used, the holes being formed only in the thicksilicon. Via-hole diameters can range from the one micron scale up totens of microns, with depth to diameter aspect-ratios going from 5 orless up to 30 or more. The minimum pitch that can be implemented betweenthe holes is a critical parameter for minimizing the distance thatelectrical signals have to cover between the vertically stacked ICs. Theminimum pitch is usually a small multiple of the minimum hole diameter.

In the so-called “via-last approach”, the holes are formed in the waferbackside through the silicon, until coming up to the conductive materialon the wafer frontside. In this case, in addition to the possible etchmask materials on the silicon as in the via-first, the bottom of thehole (i.e. near to the wafer frontside) is formed in a different,possibly conducting, material such as copper. The layered stack can thusinclude possible masking layers, silicon sidewalls and a conductivebottom.

An additional option for the via-last approach is based on etching orlaser drilling through the full stack of materials on the waferfrontside including dielectric insulating materials. The bottom of thehole is deep in the silicon substrate. The layered stack can include inthis case, possible masking layers, sidewalls of various dielectricmaterials, sidewalls of silicon and bottom of silicon. In via-last, theholes are usually formed with dimensions and pitch (e.g. tens ofmicrons) larger than in the via-first, usually targeted to be connectedwith the underside of previously formed copper pads on the front surfaceof the wafer.

GENERAL DESCRIPTION

The present invention provides a novel optical system and method forobtaining at least one of a cross-section profile, depth, width, slope,undercut and other parameters of via-holes by non-destructive technique.It should be understood that to control etch processes and subsequentcoating processes, via-holes profile has to be determined. For example,controlling the depth of the holes is critical for reaching a correctvertical location. The ability to effectively coat the inside of theholes, usually with barrier layers, and subsequently fill them with aconductive material, depends on the geometrical profile of the holes.

To control the profile cross-section of the holes, a physicallydestructive cleavage or etch is usually performed. The cross-section isthen exposed to imaging by optical-microscope,scanning-electron-microscope or scanning-ion-microscope.

The present invention enables determining one or more parameters of atleast one via-hole in a structure by providing an optical systemcomprising inter alia an illumination system for producing at least onelight beam and directing it on a sample in a region of the structurecontaining at least one via-hole. The light reflected from the via-hole(or holes), is collected by a detection system comprising a detector.The detection system is configured and operable to collect a pattern oflight reflected from the illuminated region, the light pattern beingindicative of one or more parameters of the via-hole. The pattern of thereflected light incident on the detector is analyzed by a control systemconnected to the detection system and one or more parameters of thehole(s) are found. The control system comprises a memory utility forstoring a predetermined theoretical model comprising data representativeof a set of parameters describing via-holes reflected pattern, and adata processing and analyzing utility configured and operable to receiveand analyze image data indicative of the detected light pattern anddetermine one or more parameters of the via-hole. It should be notedthat all the subsequent description relating to the measurement of asingle hole is applicable to multiple holes whether placed in arbitrarylocations or in a repetitive array structure.

In some embodiments, the detection system comprises a light sensitivesurface located in a far field relation or in a Fourier relation withrespect to a sample surface.

It should be understood that the incident light beam on the sampleundergoes different reflections in the hole depending on at least someof the following parameters: the incident-beam's tilt from normal, holeopening shape, aspect-ratio, sidewall slope, sidewall slope variation,bottom rounding, surface roughness, surface absorption, surface coatingetc.

The light pattern reflected from the sidewalls effectively describes theshape and parameters of the sidewalls and enables their analysis. Forexample, if the bottom of the hole has a high degree of rounding, thelight beam reflected from the bottom effectively spreads into atwo-dimensional fan which can probe the sidewalls, even when theincident beam is normal to the surface of the sample. If the bottom ofthe hole is essentially flat, controlled tilt of the incident beam isrequired to obtain information on the sidewalls.

In some embodiments, the illumination system comprises a plurality oflight sources. The light sources may emit at different angles ofincidence on a sample surface, the detection system collecting aplurality of light patterns corresponding to different angularpositions. At least two of the plurality of light sources can producelight beams at different wavelengths.

The illumination system may comprise a light source associated with anaperture configured to shape the angle incident on a sample surface.

In some embodiments, the illumination system comprises an array of LEDsor lasers.

The illumination system may comprise an objective lens configured tofocus a plurality of beams on the sample, the array being located in theback-focal plane of the objective lens, the back-focal plane having aFourier relation or a far field relation with the sample surface plane.The array may also be located at a plane having a Fourier relationshipor far field relationship with the sample surface plane. The array maybe imaged to a plane having a Fourier relationship or far fieldrelationship with the sample surface plane. The array may be arranged ina grid-like pattern.

The one or more parameters of the via-holes may be selected from thefollowings: geometrical profile, cross-section profile, depth, width,slope, undercut, hole opening shape, aspect-ratio, sidewall slope,sidewall slope variation, bottom rounding, surface roughness, surfaceabsorption, surface coating of the via-holes.

In some embodiments, the system is configured and operable fordetermining parameters of multiple holes distributed in a sample inarbitrary locations or in a repetitive array arrangement.

The detection system may comprise a lens configured to collect thepattern of the reflected light and to image the pattern onto thedetector.

The system may comprise at least one of polarizer or spatial filterconfigured to block a portion of the light pattern reflected from theregion surrounding the via-hole.

According to another broad aspect of the present invention, there isprovided a method for determining parameters of at least one via-hole.The method comprises providing data indicative of an initial theoreticalprofile of at least one via-hole having a set of parameters and a modelimage based on the theoretical profile; the set of parameters describingvia-holes reflected pattern and being based on morphologicalcharacteristics of an image of a sample to be analyzed; illuminating aregion of a sample containing at least one via-hole; collecting apattern of light reflected from the region and being indicative of oneor more parameters of the via-hole; receiving and comparing an imagedata indicative of the detected light pattern and the model image anddetermining at least one parameter of the via-hole in the sample.

In some embodiments, the method comprises determining a degree ofcorrelation between the image data indicative of the detected lightpattern and the model image and when the degree of correlation is beyonda predefined range, generating as new set of parameters based on thedifferences between the images.

The method may comprise varying at least one illuminating parameter andcollecting a plurality of patterns of reflected light corresponding tothe variation and comparing each image data indicative of the detectedlight patterns with a corresponding model image. The illuminationparameter(s) is/are selected from the followings: angle of incidence ofa light beam on the sample surface, wavelength of incident light beam,divergence angle of incident light beam, rotation angle between anillumination source illuminating the region of the sample and the samplesurface, polarization of the incident light beam.

The method may comprise varying the angle of incidence of the light beamon the sample surface and detecting the reflected light pattern asfunction of different incident angles, being indicative of themorphology of the shape of the hole.

In other embodiments, the method comprises varying the divergence angleof incident light beam and detecting the reflected light pattern asfunction of different divergence angles, varying the resolution of thereflected light patterns and the accuracy of the parameters of thevia-holes.

In other embodiments, the method comprises varying the wavelength ofincident light beam and detecting the reflected light pattern asfunction of different wavelengths, being indicative of the depth and thepitch of scalloping profile of the walls' hole.

The parameters of the theoretical profile may be selected from at leastone of the following parameters: hole opening shape, aspect-ratio,sidewall slope, sidewall slope variation, bottom rounding, surfaceroughness, surface absorption, surface coating.

The method may comprise rotating the plane of incidence of the lightbeam in relation with the plane of the sample surface by rotating atleast one of a sample, a light source and an aperture located in frontof the light source and a polarizer.

The method may comprise characterizing thickness distribution andgeometrical profile of a coating layer deposited in the via-hole byperforming measurements before and after the coating, and by analyzingthe differences between the measurements.

In some embodiments, the method comprises segmenting the image dataindicative of the detected light pattern into different profiles usingthe morphological characteristics of the image. The morphologicalcharacteristics are selected from symmetry of the image in relation toat least one incidence angle, narrow-angle spread of reflection anglesaround the incident angle indicative of side-wall angles, number ofrings in the reflected pattern of light indicative of the aspect ratioof the hole, portion of the reflected pattern of light at high anglesindicative of a slight bottom rounding, reduced or hazy light pattern asindicator of surface roughness.

The method may comprise collecting a pattern of light scattered from theregion and analyzing an image data indicative of the scattered lightpattern indicative of the shape and the aspect ratio of the holes.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to understand the invention and to see how it may be carriedout in practice, embodiments will now be described, by way ofnon-limiting example only, with reference to the accompanying drawings,in which:

FIG. 1 schematically represents the reflection of a light beam fromvia-hole before (1A) and after coating (1B);

FIGS. 2A-2B schematically represents two examples of the configurationof the optical system of the present invention;

FIG. 3 schematically represents a flowchart of the measurement analysisaccording to the teachings of the present invention;

FIGS. 4A-4D represent simulated reflected patterns from cylindricalholes having different aspect-ratios;

FIGS. 5A-5C represents simulated reflected patterns from conic holeshaving different sidewall angles;

FIGS. 6A-6C represent a cylindrical hole having a partially roundedbottom and simulated reflected patterns therefrom for rays reflected atlarge incident angles (in the range of about 14-30°) and at smallincident angles (about 2°);

FIGS. 7A-7F represent simulated reflected patterns from a slightly conichole and mask layer illustrated in FIG. 7E with different bottomrounding radius;

FIGS. 8A-8C represent simulated reflected patterns from slightly conicholes with different portions of flat bottom;

FIG. 9 schematically represents a typical cross-section of hole withscalloping; and;

FIG. 10 represents simulated reflected patterns from a hole having asquare opening and a rounded bottom.

DETAILED DESCRIPTION OF EMBODIMENTS

Reference is made to FIGS. 1A-1B illustrating an example how theprinciples of the invention can be used for analyzing the hole profile.In this specific example, the reflection of a light beam from a via-holebefore (1A) and after coating (1B) is shown, which can be made withdiffusion-barrier, insulating or conducting material layer (e.g.semi-transparent). The present invention enables measuring the thicknessand profile of such coating layers. For non-transparent coating layers,their thickness distribution can be characterized by performingmeasurements before and after the coating step, and by analyzing thedifference between the measurements. For transparent coating layers,their thickness distribution can be characterized similarly, analyzingthe difference between the measurements, or by a single measurementafter the coating step. It should be noted that, in certain cases,especially with complex structures, the measurement results from thepre-coating step can be set into the analysis calculation of thepost-coating measurement in order to simplify the calculations orincrease the accuracy of the results.

Reference is made to FIG. 2A generally illustrating the optical system100 of the present invention. The optical system 100 comprises anillumination system 102 emitting a light beam on a sample 106 in aregion containing at least one hole. The light pattern reflected fromthe hole (or holes), is collected on a detector 104 (e.g. area detectorlocated in a far field relation to the sample surface). The opticalpaths of incident and reflected light beams are spatially separated by abeam splitter/combiner 110, thus allowing the reflected lightpropagation to the detector. The output of the detector 104 is connectedto a control unit 108, which is configured and operable for receivingdata indicative of the pattern of the reflected light incident on thedetector 104 and analyzing the data and determining the parameters ofthe hole(s).

The incident light beam on the sample undergoes different reflectionsfrom interfaces in the hole depending on at least some of the followingparameters: the incident-beam's tilt from normal, hole opening shape,aspect-ratio, sidewall slope, sidewall slope variation, bottom rounding,surface roughness, surface absorption, surface coating etc. In someembodiments, to enable the analysis of at least one of the parameters ofthe via-holes, measurements have to be performed by varying at least oneparameter of the above list, and the difference between the measurementsis used to determine the value of at least one corresponding parameter.

In one embodiment, the angle of the incident light beam is varied andthe measurements are performed at different angles. The illuminationsystem 102 may comprise multiple light sources (e.g. small-area sources)at various off-axis angles enhancing parameter sensitivity and/orsimplifying the analysis. The range of off-axis angles for obtainingoptimal information content depends on the shape of the hole andespecially on the aspect-ratio of the hole. The larger the tilt fromnormal incidence, the larger the number of reflections the light raysundergo within the structure.

The multiple light sources can be operable simultaneously or separately.The multiple light sources can be of the same wavelength or of differentwavelengths. For example, in order to collect the information fromdifferent angles simultaneously, the illumination system may comprisemultiple light sources of different colors associated with a color CCDcamera.

The shaping of the incidence angles on the sample may also be producedby a large area source associated with an aperture. This aperture can bestatic, scanned or switchable. The light source can thus be scannedthrough a range of angles, and a series of images can be captured atsuccessive angular positions. This configuration can be useful interalia if the examined structure has sharp angular variations in wallangle, especially re-entrant profiles, resulting in sharp variations inthe reflected light pattern versus the incidence angle. Alternatively,the scanning can be achieved by using an extended wide-band lightsource, placing a spatially graded spectral filter in front of it, andcapturing images through a time variable spectral filter, such as afilter wheel, synchronized with image capture on the detector.

The illumination system 102 can also be implemented by an array of smallsources e.g. an individually addressable Light Emitting Diode (LED)array, illuminating a relatively large region of the structure. Forsimplifying the determination of the parameters of the via-holes, sucharray can be placed in a plane having a far-field or Fourier relation tothe sample surface and conjugates with the light sensitive detectorsurface.

Reference is made to FIG. 2B, illustrating another configuration of theoptical system of the present invention. In this specific example, theoptical system 200 comprises a illumination system 202 including anarray of light sources (LEDs or lasers) located in a back-focal plane ofan objective lens 208 focused on the sample 106, where the back-focalplane exhibits a Fourier relation with the sample plane. The array canalso be located at a plane which is imaged onto a plane with a Fourierrelationship with the sample. LEDs of different wavelengths can bearranged in a grid-like pattern to provide degrees of freedom in settingup a measurement with an optimal incidence angle and wavelength for eachhole shape. The density of the array is operable to enable sufficientangular resolution of the measurement based on the required resolutionof the calculated theoretical model.

The divergence angle of the incident beam on the sample can also bevaried. A relatively small divergence angle can result in sharper, moredistinguishable features on the detector to the detriment of reducedlight pattern intensity and thus increased measurement integration time.A larger divergence angle reduces the measurement time but can degradethe resolution of features in the image on the detector and thus reducethe ability to accurately differentiate parameters of the hole profile.The divergence angle can be optimized during the measurement set-upprocess by varying the divergence angle to the largest possible wherethe resolution in the image is limited by small scale scattering effectsand/or the resolution of the optical system.

As described above, the detector 104 is located in the optical system100 at a position which enables capturing the light pattern reflectedand scattered from the sample surface. The detector 104 can be placed ata distance from the sample in order to capture a far-field image of thelight pattern. Alternatively, an optical element can be placed in frontof the detector 104 to enable more flexibility in locating the detector.This can preferably enable construction of a better optimized or morecompact optical system.

A lens 210 can be used to collect the reflected light pattern and imageit onto the light sensitive surface of the detector 104. Optionally thelens may be configured so that the image on the detector is of a Fourierrelation to the sample.

In some embodiments, a polarizer can be located in the optical pathbefore or after the light beam interaction with the sample. A polarizingbeam splitter/combiner can be used. Alternatively, two crossedpolarizers can be located in the optical path before and after thesample to enable blocking of the light pattern reflected directly fromthe region of the structure surrounding the hole.

In other embodiments, the plane of incidence can be rotated in relationto the axis of the sample (azimuth). For non-circular holes, e.g. holeswith rectangular openings, the rotated plane of incidence can be used toobtain information on the via-hole(s) shape. The rotation can beachieved by rotating the sample, and/or the source and/or an aperture infront of the source. The rotation can be combined with possible rotationof a polarizer(s). For holes having a substantially circular opening,the rotated plane of incidence can be used if the holes are closelyspaced in a grid-like arrangement and the orientation of the diffractionpattern of the holes arrangement can give additional information for theanalysis.

In some embodiments, a spatial filter (e.g. field stop) is included inthe optical path at a position which is optically conjugated to thesample surface to enable limiting the lateral extent of the measuredlight beam interaction with the sample, the spatial filter being locatedeither in the incident beam path or in the optical path between thesample and the detector.

In some embodiments, an additional imaging detector can be added to theoptical system at a location conjugate to the plane of the samplesurface to enable verification of the measurement location. For example,a CCD camera can be added to provide an image of the sample surface toenable alignment on a preferred measurement site by means of patternrecognition. The illumination for the pattern recognition can beperformed by separate means or by utilizing the incident light beam usedfor the hole measurements.

Due to the large scale size of the hole dimension (diameter), e.g.multi-micron range, with respect to the wavelength of the light beam,the incident light beam can be incoherent. This depends on the coherencelength of the light source used and the numerical aperture and otherparameters of the illumination system. A system using incoherentillumination is not sensitive to the arrangement of holes whether in arandom or in a grid-like pattern and is not subject to speckle effects.Low coherence or to incoherence can simplify the modeling of thereflection from the sample due to the absence of interference effects.

On the other hand, coherence can provide additional information on thestructure due to such interference effects. Additionally, using a highlycollimated light source with small extent in the Fourier-plane orfar-field relation, reduces the possible smearing of the reflectionpattern.

Moreover, the reflected pattern of an incoherent beam, with wavelengthconsiderably smaller than the measured structure, provides onlyangle-based information, which is scale invariant, thus enabling thedetermination of the shape of the hole but not of its absolute size.

If the lateral coherence length is larger than the diameter of the holeand/or the longitudinal coherence length is larger than the depth of thehole, then the reflected pattern can contain diffraction andinterference effects. Based on knowledge of the wavelength and materialsof the structure, these effects can enable determination of absolutegeometrical values and not just relative ones.

If the illumination system produces at least two incoherent light beamsat different wavelengths (e.g. using at least two different lightsources), the pattern of the reflected light collected from eachwavelength does not provide any additional information, except for thewavelength dispersion of reflectivity. When coherence effects appear,they are stronger for longer wavelengths of dimensions closer to thedimensions of the hole. To reduce the effect of the coherence on thereflection pattern, a light source with broader wavelength range can beused. A wideband coherent light source such as a super continuum lightsource (e.g. fiber-laser) can also be used if high intensity isrequired.

Alternatively or additionally, in the absence of absolute hole sizeinformation in the reflected pattern, an additional channel can beimplemented as part of the system to measure the width of the opening ofthe hole, for example using a high magnification imaging channel. Thusthe combination of the information from the two channels can provideboth the shape and size information.

To determine the depth of the hole, coherent illumination at normalincidence can be used and the interferences between the bottomreflection and the surrounding region of the hole can be measured.Combining absolute measurements of certain parameters, (e.g. holedimensions such as depth, diameter, etc.) with relative measurements ofthe full hole cross-section (e.g. determination of theshape/geometry/profile, etc. of the hole), enables providing of the fullcross-section measurement in absolute terms.

Moreover, phase measurement of the reflection can provide additionalinformation on the hole profile (e.g. depth profile). This can beperformed by splitting off a part of the incident beam prior to theinteraction with the sample and causing interference of the split-offincident beam with the reflected beam. The split-off beam could beexpanded in order to cover the whole detector light sensitive surfaceand thus produce phase sensitive intensity measurements.

For all types of light sources, a calibration procedure might to beperformed to characterize the light pattern collected on the detectorwhen reflected from a known reflectivity sample such as a single-crystalsilicon wafer. This calibration can be performed on a periodic basisdepending on the stability of the illumination system source and theoptical system construction.

Reference is made to FIG. 3 illustrating a general flowchart of thetechnique of the present invention. According to the teachings of thepresent invention, in step 302, a control system connected to thedetection system comprises inter alia a data processing utilityconfigured to determine data representative of an initial hypotheticalprofile of at least one via-hole, characterized by a finite set ofparameters. The initial theoretical (e.g. hypothetical) profile isstored in a memory utility. In step 304, the data processing utilitygenerates a theoretical model image using the theoretical profile. Instep 306, a measurement image of at least one hole profile is capturedby a detection system and is compared to the model image in 308 by thedata analyzing utility. A predefined metric 310 (i.e. profile adjustmentof the general morphology of the images) is used to quantify the qualityof the correlation between the model and measurement images. If the fitbetween the images is not within a predefined range, a new profile (i.e.a new set of parameters) is generated based on the difference betweenthe images and the known dependence of the profile on the parameters.Once a fit is achieved, the parameters of the relevant theoretical modelare considered as the output of the optical system as illustrated in 312and this information is provided to the user for controlling the processof the hole formation.

If the analysis is carried out as part of an ongoing measurement flow,the initial theoretical profile can be based on the output result of aprevious measurement. This can reduce the number of iterations requiredto obtain the desired fit.

The generation of a set of parameters can be based on analyzing thegeneral morphology of the measured image. The morphologicalcharacteristics of the measured image can be selected from at least oneof the following: the symmetry of image in relation to the incidenceangle(s); the narrow-angle spread of reflection angles around theincident angle indicative of side-wall angles, the number of rings inthe reflected image which is indicative of the aspect-ratio of the hole,the portion of the reflected light pattern at relatively high angleswhich is indicative of a slight bottom rounding, the reduced or hazylight pattern as indicator of surface roughness and others.

In some embodiments, multiple measured images are obtained, for examplefrom multiple incidence angles of light sources. The multiple measuredimages induce the creation of a corresponding multiplicity of modelimages generated from the theoretical profile and a comparison metric isdefined accordingly. The fit is then carried out in parallel for all theimages.

It should be noted that the image produced from the theoretical profilecan be based on geometrical ray tracing calculations or diffractionbased calculations based on physical optics or on a combination of both.In order to reduce the calculation time, a series of theoreticalprofiles can be pre-calculated and stored in the memory utility. Theprofiles can be generated on the basis of a theoretical range of processconditions or based on characterization of actual samples. Thetheoretical range of process conditions can be the input of the controlsystem, together with the parameters of measurement conditions of theoptical system. The control system thus provides a range of possibletheoretical profiles. These theoretical profiles are subsequently usedto generate images and the images are stored in a database asillustrated in the figure.

The calculation time can also be reduced by recognizing morphologicalcharacteristics of the image (i.e. pattern recognition) and segmentingthe image into specific profile families. The segmentation can beperformed using at least one the morphological characteristic.

These morphological characteristics can also be used to recognizeprocess excursions, e.g. reduced intensity of the light pattern in theimage could be an indicator of enhanced scalloping formed for example bya Bosch-type etching process. A process alarm illustrated in 314 can beraised based on such a parameter.

An adaptive mode of measurement can be implemented, especially when theanalyzing of samples of unknown hole profile is performed. In thisadaptive mode of measurement the illumination system parameters arevaried while successively capturing measurement images until a sharpimage with strongly recognizable features is found. The parameters whichcan be varied include, but are not limited to: angle of incidence,rotation angle, wavelength, divergence angle. The recognizable featuresinclude, but are not limited to: under-filled rings, spots, high-anglesignal rings, rings with cusps, bands dependent on the number ofsidewall reflections.

Reference is made to FIGS. 4A-4D illustrating modeled reflected patternsfrom cylindrical holes having different aspect-ratios. The reflectioneffects caused by various parameters can be separated. For asubstantially cylindrical hole with a flat bottom, the number ofreflections via sidewalls and via the bottom is a direct function of theincidence angle and the aspect ratio. The number of the rings in thereflected image is indicative of the aspect-ratio of the hole. Thelarger the number of the rings is, the larger the aspect-ratio of theholes. Moreover, the tangential filling of rings increases withadditional multiple reflections. The larger the incidence angle is, themore homogeneous the filling of the rings.

Reference is made to FIGS. 5A-5C illustrating modeled reflected patternsfrom conic holes having different sidewall angles (SWA). It has beenobserved that the reflected patterns vary differently when the hole hasa non-perpendicular sidewall angle (SWA). For positive slopes, the ringsbegin to fold onto themselves as the SWA increases and cusps i.e.singular points appear. Increasing the SWA and/or incidence angle causesthe cusps to split into multiple rings. For negative (re-entrant)slopes, the rings shorten and start to turn outwards into wing-likeshapes. At higher aspect ratios and/or incidence angles, multiplereflections between the walls fill the rings and form double rings.

Bottom rounding, due to its more varied angle content, causes rays toreflect in a much larger angle range than a flat bottom. The larger thearea of non-flat bottom (e.g. bottom rounding), the larger thepercentage of rays reflected out of the above described rings. The raysare reflected into a range of angles of order tens of degrees. The fullreflection angular range can be analyzed or the reduced angular rangeimage of the main sidewall and bottom reflections can be analyzedseparately. Reference is made to FIGS. 6A-6C in which the incidenceangle is 2 degrees from normal on an aspect ratio (AR) of 14 and +1degree SWA. FIG. 6A shows a wide angular range (about 14-30°) ofreflection caused by the rounding at the outer edges of the bottom. FIG.6B shows the reflection from the flat portion of the bottom into smallangles(2°), where the partial filling of the rings is due to the portionof rays reflected out to higher angles. As illustrated in FIG. 6C, thebottom rounding covers more than a half of the bottom area.

Reference is made to FIGS. 7A-7E illustrating different reflectionspatterns for a slightly conic hole (illustrated in FIG. 7F) coated witha mask layer and having different bottom radius varying from 9 micronsto 2 microns (FIG. 7A has bottom radius of 9 microns, FIG. 7B of 7microns, FIG. 7C of 5 microns, FIG. 7D of 3 microns, FIG. 7E of 2microns). In this specific example, the depth of the hole is 30 microns,the top diameter 2.7 microns, the bottom diameter 2.5 microns, and themask thickness 2 microns. It should be noted that the integration timeincreases with the decreasing of the bottom radius. For a nominalintegration time of N in FIG. 7A, in FIG. 7B the time integration is1.5N, in FIG. 7C 3N, in FIG. 7D 6N, and in FIG. 7E 11N. When the bottomof the hole is rounded, normal incidence light can be used. The lightreflected from the rounded bottom spreads into a two-dimensional fanemanating from the bottom of the hole, which can probe the sidewalls.The number of sidewall reflections depends on the radius of the bottomrounding and on the aspect ratio of the hole profile. Any sidewall slopeinduces a change of angle of the reflected fan and the resultantmeasured image contains bands dependent on the number of sidewall slopereflections. Therefore, the reflected light pattern collected on thedetector, is spread out over a larger spatial range. These reflectionscan also probe re-entrant sidewall profile. Due to the increasing spreadof angles coupled to shrinking of the bottom radius, an increasedmeasurement integration time or increased light source intensity arerequired because of the loss caused by the multiple reflections. Itshould be understood that in comparison with flat bottom hole, for holeshaving a rounded bottom each ray undergoes a larger number ofreflections inside the hole and that the angles of incidence on thesidewalls are lower than for a flat bottom.

The separation of effects due to the bottom rounding from those due tothe sidewall slopes can be achieved by fitting the image to an imagebased on a theoretical model. If the parameter separation is difficult,measurements can be carried out at additional angles of incidence.

It should be noted that the reflected light beam from the sample surfaceoutside the hole, which is essentially the specular reflection, is muchstronger and more spatially concentrated than the reflected light beamfrom the hole. Moreover, the reflected light beam signal from the holeis much stronger and more spatially concentrated than the scatteredlight beam signal from the hole. A large dynamic range is thereforerequired from the detector to enable capture and measurement of all thereflected information simultaneously. Additionally, it can be useful toinsert a spatial filter (e.g. mask) into the reflected beam that blocksonly the region of the specular beam to eliminate the specularreflection or the region of the near-axis specular beam to eliminate thescattered light beam signal, reflected from flat areas outside the hole,thus enabling sufficient detector integration time without sufferingfrom saturation of the reflected beam. If the weaker high anglereflections and scatter need to be analyzed, it is possible to block thenear-axis reflections e.g. by providing appropriate blocking aperturestop.

In order to filter out the light reflected from the flat areas outsidethe hole, it is also possible to polarize the incident light and toprovide a polarizer rotated at 90 degrees in the path to the detector.This can reduce the dynamic range required from the detector. The lightcollected by the detector will then only be skew rays undergoingreflections in the hole, having a direction out of the polarized planeof incidence.

It should be noted that if the hole has a non-flat bottom, the reflectedlight pattern becomes more complex owing to the continuous gradient ofthe reflection angle at the bottom. Then, the image has to be collectedand analyzed with a large dynamic range, blocking the specularreflection from outside the hole. Therefore, for non-flat bottom hole,larger detector integration times or higher intensity incident light arethen required.

Reference is made to FIG. 8 illustrating reflected patterns fromslightly conic holes having different portions of flat bottom. As it canbe observed from the figure, when the portion of flat bottom areaincreases, the rings are filled out. An angular spread of +/−0.3 degreeshas been added to the 2 degrees of normal incidence light.

It should be noted that the shape of the hole opening is usuallycircular but the present invention can be used to characterize profilesof holes with various openings including square, elliptical, square withrounded corners as well as holes with a square opening tapering into acircle or rounded square at the bottom.

Moreover, due to the shallow incidence angle on the sidewalls, thereflected light from the hole can be at least partially polarized.Intentionally polarizing the incident light beam can enable extractionof ellipsometric effects of the sidewall reflections. The ellipsometriceffects can be utilized for measurement of coatings on the sidewallsincluding both transparent and thin metallic coatings. The absorption ofmultiple reflections on the sidewalls by the substrate or coatingmaterials causes a stepwise reduction of the intensity of some of thereflected light pattern depending on the number of reflections the raysundergo. This stepwise reduction of intensity is an additional parameterthat can be modeled and used for obtaining information on the holeprofile.

It should be noted that relatively small sharp features within the holeadd diffraction effects to the reflected light pattern. This can affectthe required angular divergence of the incident beam. Scanning theincident beam angle can enable more detailed sensing of such diffractioneffects and determination of their size and location within thecross-section.

Increased background noise and loss of light patterns intensity orcontrast are due to scattering induced by roughness of the sidewalls andof the bottom of the hole. Due to the fact that the scattered beamemanates, at least partially, from the bottom of the hole, the intensityof the scattered beam is higher close to the vertical axis of the hole.Therefore, the spatial profile of the scattered beam containsinformation on the shape of the hole opening and the aspect-ratio. Itshould be noted that certain techniques typically used for the formationof the etched holes can cause systematic sidewall roughness, e.g.scalloping caused by the well known Bosch etch process as illustrated inFIG. 9. The depth and pitch of the scalloping can be analyzed by varyingthe wavelength of the incident light beam. Wavelengths longer than thescalloping cycle will be less affected by this effect.

For small hole-openings in the range of the wavelength dimension, thereflected light pattern contains diffraction effects. The theoreticalmodel is then based on the convolution of the geometrical reflectionfrom the sample surface outside the hole with the diffracted light fromthe shape of a single hole-opening. A light beam having large lateralcoherence relative to the diameter of the hole can be used and a farfield pattern of the reflection from the region of hole-opening can beanalyzed to obtain the absolute size. If the holes are arranged in denseperiodic array, additional diffraction effects could appear depending onthe effective lateral coherence length. The diffraction image can beanalyzed and the absolute size of the hole-opening can be obtained basedon the knowledge of geometry of the system and the wavelength of thelight beam.

Reference is made to FIG. 10 illustrating the reflection from a holehaving an intermediate shape, e.g. a square hole with rounded corners.As it can be observed from the figure, the reflected pattern comprises acombination of spots and partial rings. For a hole having asubstantially rectangular shaped opening and flat walls, the reflectionretains the spot shape and no spreading into rings occurs. This is thecase also for sloped flat walls. The number and location of spotsdepends on the aspect ratio, sidewall slope and incident angle.

The invention claimed is:
 1. An optical system for determining one ormore parameters of at least one via-hole in an structure, the opticalsystem comprising: an illumination system for producing at least onelight beam and directing it on a sample in a region of the structurecontaining at least one via-hole; a detection system configured andoperable to collect a pattern of light reflected from the illuminatedregion, the light pattern being indicative of one or more parameters ofsaid via-hole; and, a control system connected to the detection system,the control system comprising a memory utility for storing apredetermined theoretical model comprising data representative of a setof parameters describing via-holes reflected pattern, an imagegeneration utility configured and operable to generate model imagesusing said predetermined theoretical model, and a data processing andanalyzing utility configured and operable to receive and analyze animage received from said detection system and being indicative of thedetected light pattern and the generated model image, fit the receivedimage to the generated model image, and determine one or more parametersof said via-hole from the set of parameters of the theoretical modelthat corresponds to the model image with a predefined fitting range. 2.The system of claim 1, wherein said detection system comprises a lightsensitive surface located in a far-field relation or in a Fourierrelation with respect to a sample surface.
 3. The system of claim 1,wherein said illumination system comprises a plurality of light sources.4. The system of claim 3, wherein said light sources emit at differentangles of incidence on a sample surface, said detection systemcollecting a plurality of light patterns corresponding to differentangular positions.
 5. The system of claim 3, wherein at least two ofsaid plurality of light sources produce light beams at differentwavelengths.
 6. The system of claim 1, wherein the illumination systemcomprises a light source associated with an aperture configured to shapethe angle incident on a sample surface.
 7. The system of claim 1,wherein the illumination system comprises an array of LEDs or lasers. 8.The system of claim 7, wherein the illumination system comprises anobjective lens configured to focus a plurality of beams on the sample,said array being located in the back-focal plane of said objective lens,said back-focal plane having a Fourier relation or a far field relationwith the sample surface plane.
 9. The system of claim 8, wherein saidarray is imaged to a plane having a Fourier relationship or far fieldrelationship with the sample surface plane.
 10. The system of claim 7,wherein said array is located at a plane having a Fourier relationshipor far field relationship with the sample surface plane.
 11. The systemof claim 7, wherein said array is arranged in a grid-like pattern. 12.The system of claim 1, wherein said one or more parameters of saidvia-holes are selected from the followings: geometrical profile,cross-section profile, depth, width, slope, undercut, hole openingshape, aspect-ratio, sidewall slope, sidewall slope variation, bottomrounding, surface roughness, surface absorption, surface coating of saidvia-holes.
 13. The system of claim 1, configured and operable fordetermining parameters of multiple holes distributed in a sample inarbitrary locations or in a repetitive array arrangement.
 14. The systemof claim 1, wherein said detection system comprises a lens configured tocollect the pattern of the reflected light and to image said patternonto said detector.
 15. The system of claim 1, comprising at least oneof polarizer or spatial filter configured to block a portion of thelight pattern reflected from the region surrounding said via-hole.
 16. Amethod for determining parameters of at least one via-hole comprising:providing data indicative of an initial theoretical profile of at leastone via-hole having a set of parameters and a model image based on saidtheoretical profile, wherein said set of parameters describe one or morereflected patterns of via-holes corresponding to one or moremorphological characteristics of an image of a sample to be analyzed;illuminating a region of a sample containing at least one via-hole;collecting a pattern of light reflected from said region and beingindicative of one or more parameters of said via-hole; receiving animage data indicative of the collected light pattern; fitting said imagedata to said model image; and determining at least one parameter of saidvia-hole in said sample from the set of parameters of the theoreticalprofile corresponding to the model image upon achieving a predefinedfitting range, wherein any of said providing, illuminating, collecting,receiving, comparing, and determining steps are performed by any of amachine, a computer, processor, or controller.
 17. The method of claim16, comprising determining a degree of correlation between said imagedata indicative of the detected light pattern and said model image andwhen said degree of correlation is beyond a predefined range, generatinga new set of parameters based on the differences between the images. 18.The method of claim 16, comprising varying at least one illuminatingparameter and collecting a plurality of patterns of reflected lightcorresponding to said variation and comparing each image data indicativeof the detected light patterns with a corresponding model image.
 19. Themethod of claim 18, wherein said at least illumination parameter isselected from the following: angle of incidence of a light beam on thesample surface, wavelength of incident light beam, divergence angle ofincident light beam, rotation angle between an illumination sourceilluminating said region of the sample and the sample surface,polarization of the incident light beam.
 20. The method of claim 19,comprising varying the angle of incidence of the light beam on thesample surface and detecting the reflected light pattern as function ofdifferent incident angles, being indicative of the morphology of theshape of the hole.
 21. The method of claim 20, wherein saidmorphological characteristics are selected from symmetry of the image inrelation to at least one incidence angle, narrow-angle spread ofreflection angles around the incident angle indicative of side-wallangles, number of rings in the reflected pattern of light indicative ofthe aspect ratio of the hole, portion of the reflected pattern of lightat high angles indicative of a slight bottom rounding, reduced or hazylight pattern as indicator of surface roughness.
 22. The method of claim19, comprising varying the divergence angle of incident light beam anddetecting the reflected light pattern as a function of differentdivergence angles, and varying the resolution of the reflected lightpatterns and the accuracy of the parameters of said via-holes.
 23. Themethod of claim 19, comprising varying the wavelength of incident lightbeam and detecting the reflected light pattern as a function ofdifferent wavelengths, being indicative of the depth and the pitch ofscalloping profile of the walls' hole.
 24. The method of claim 16,wherein the parameters of the theoretical profile are selected from atleast one of the following parameters: hole opening shape, aspect-ratio,sidewall slope, sidewall slope variation, bottom rounding, surfaceroughness, surface absorption, surface coating.
 25. The method of claim16, comprising rotating the plane of incidence of the light beam inrelation with the plane of the sample surface by rotating at least oneof a sample, a light source and an aperture located in front of saidlight source and a polarizer.
 26. The method of claim 16, comprisingcharacterizing a thickness distribution and geometrical profile of acoating layer deposited in said via-hole by performing measurementsbefore and after depositing the coating, and by analyzing thedifferences between the measurements.
 27. The method of claim 16,comprising segmenting said image data indicative of the detected lightpattern into different profiles using the morphological characteristicsof said image.
 28. The method of claim 16, comprising collecting apattern of light scattered from said region and analyzing an image dataindicative of the scattered light pattern indicative of the shape andthe aspect ratio of the holes.